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 DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D119
BYD63 Ripple blocking diode
Product specification Supersedes data of November 1995 File under Discrete Semiconductors, SC01 1996 Jun 10
Philips Semiconductors
Product specification
Ripple blocking diode
FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Guaranteed minimum turn-on time for absorbing forward current transients and oscillations * Specially designed as rectifier in the auxiliary power supply in e.g. switched mode power supplies * Available in ammo-pack. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current averaged over any 20 ms period; Ttp = 55 C; lead length = 10 mm; see Fig.2; see also Fig.4 averaged over any 20 ms period; Tamb = 65 C; PCB mounting (Fig.8); see Fig.3; see also Fig.4 IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 55 C Tamb = 65 C t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax CONDITIONS MIN. - - -
handbook, 4 columns
BYD63
DESCRIPTION Cavity free cylindrical glass package through ImplotecTM(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
k
a
MAM123
Fig.1 Simplified outline (SOD81) and symbol.
MAX. 300 300 0.85 V V A
UNIT
-
0.45
A
- - -
8.25 4.45 5
A A A
Tstg Tj
storage temperature junction temperature
-65 -65
+175 +175
C C
1996 Jun 10
2
Philips Semiconductors
Product specification
Ripple blocking diode
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS IF = 1 A; Tj = Tj max; see Fig.5 IF = 1 A; see Fig.5 VR = VRRMmax; see Fig.6 VR = VRRMmax; Tj = 165 C; see Fig.6 tfr ton forward recovery time turn-on time when switched to IF = 1 A in 50 ns; see Fig.9 when switched from VF = 0 V to VF = 3 V; measured between 10% and 90% of IF max; see Fig.11 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.11 f = 1 MHz; VR = 0 V; see Fig.7 MIN. - - - - - 500 TYP. - - - - - - MAX. 1.7 2.3 1 100 350 -
BYD63
UNIT V V A A ns ns
trr
reverse recovery time
-
-
150
ns
Cd
diode capacitance
-
17
-
pF
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.8. For more information please refer to the `General Part of Handbook SC01.' PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length = 10 mm note 1 VALUE 60 120 UNIT K/W K/W
1996 Jun 10
3
Philips Semiconductors
Product specification
Ripple blocking diode
GRAPHICAL DATA
1.6
MLC303
BYD63
handbook, halfpage
handbook, halfpage
0.8
MLC304
I F(AV) (A) 1.2
I F(AV) (A) 0.6
lead length 10 mm 0.8 0.4
0.4
0.2
0 0 100 T tp ( oC) 200
0
0
100
Tamb ( o C)
200
a = 1.42; VR = VRRMmax; = 0.5. Switched mode application.
a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.8. Switched mode application.
Fig.2
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
Fig.3
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
handbook, halfpage
3
MLC302
handbook, halfpage
6
MLC301
P (W) a = 3 2.5 2 2 1.57 1.42
IF (A) 4
1
2
0
0 0 0.5 I F(AV) (A) 1.0
0
1
2
3
4
V
F
(V)
5
a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.
Fig.4
Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
Dotted line: Tj = 175 C. Solid line: Tj = 25 C.
Fig.5
Forward current as a function of forward voltage; maximum values.
1996 Jun 10
4
Philips Semiconductors
Product specification
Ripple blocking diode
BYD63
103 handbook, halfpage IR (A) 102
MGA853
102 handbook, halfpage
MLC305
Cd (pF)
10
10
1 0 100 T j ( o C) 200
1 1 10
102
V R (V)
103
VR = VRRMmax.
f = 1 MHz; Tj = 25 C.
Fig.6
Reverse current as a function of junction temperature; maximum values.
Fig.7
Diode capacitance as a function of reverse voltage; typical values.
handbook, halfpage
50 25
handbook, halfpage V
MGC500
F
7 50 t fr IF
100% 110% t
2 3
MGA200
10% t
Dimensions in mm.
Fig.8 Device mounted on a printed-circuit board.
Fig.9 Forward recovery time definition.
1996 Jun 10
5
Philips Semiconductors
Product specification
Ripple blocking diode
BYD63
handbook, full pagewidth
3V DUT VF (V) 0 50 10 IF (A) 0 ton 10%
MBH530
100% 90%
Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 10 ns.
Fig.10 Test circuit and turn-on time waveform and definition.
handbook, full pagewidth
DUT +
IF (A) 0.5 1 t rr
10
25 V 50 0 0.25 0.5 IR (A) 1
t
MAM057
Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns.
Fig.11 Test circuit and reverse recovery time waveform and definition.
1996 Jun 10
6
Philips Semiconductors
Product specification
Ripple blocking diode
PACKAGE OUTLINE
BYD63
handbook, full pagewidth
5 max 0.81 max 2.15 max
MBC051
28 min
3.8 max
28 min
Dimensions in mm. The marking band indicates the cathode.
Fig.12 SOD81.
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1996 Jun 10
7


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